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Updated: May 24, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry
Zhi-Min Liao1, Han-Chun Wu, Shishir Kumar
1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, P.R. China. liaozm@pku.edu.cn
Abstract:
A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.
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