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Related Concept Videos

MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

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Related Experiment Video

Updated: May 24, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

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Published on: August 15, 2014

A High Isolation Series-Shunt RF MEMS Switch.

Yuan-Wei Yu1, Jian Zhu, Shi-Xing Jia

  • 1Department of Physics, Nanjing University, Nanjing, 210093, China;

Sensors (Basel, Switzerland)
|March 13, 2012
PubMed
Summary

This study introduces a compact microelectromechanical systems (MEMS) switch for wideband applications. The developed series-shunt MEMS switch achieves high isolation and low insertion loss, ideal for radio frequency (RF) circuits.

Keywords:
RF MEMS switchelectrical modelmetal-contactseries-shunt

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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Microwave Engineering

Background:

  • Microelectromechanical systems (MEMS) switches offer advantages in RF applications.
  • Achieving high isolation and low loss in compact MEMS switches remains a challenge.

Purpose of the Study:

  • To develop a wideband, compact, and high-isolation MEMS switch.
  • To create a reliable small-signal model for optimizing MEMS switch design.

Main Methods:

  • Implementation of a series-shunt MEMS switch with three ohmic switch cells on a coplanar waveguide (CPW).
  • Development and validation of a structure-based small-signal model for the 3-port ohmic MEMS switch.
  • Extraction of model parameters from measured results for design optimization.

Main Results:

  • The single ohmic switch demonstrated low intrinsic loss (0.1 dB) and high isolation (24.8 dB) at 6 GHz.
  • The developed series-shunt switch achieved over 40 dB isolation and 0.35 dB insertion loss from DC to 12 GHz.
  • The compact chip size is 1 mm × 1.2 mm, with an average pull-in voltage of 28 V and switching time of 47 μs.

Conclusions:

  • The developed electrical equivalent model accurately predicts RF performance, validating its utility for shortening design cycles.
  • The compact series-shunt MEMS switch design offers excellent isolation and low insertion loss for wideband RF applications.