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Updated: May 24, 2026
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Electrochemical deposition of germanium sulfide from room-temperature ionic liquids and subsequent Ag doping in an
Sankaran Murugesan1, Patrick Kearns, Keith J Stevenson
1Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
Abstract:
A facile room-temperature electrochemical deposition process for germanium sulfide (GeS(x)) has been developed with the use of an ionic liquid as an electrolyte. The electrodeposition mechanism follows the induced codeposition of Ge and S precursors in ionic liquids generating GeS(x) films. The electrodeposited GeS(x) films were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) and Raman and X-ray photoelectron spectroscopy (XPS). An aqueous-based Ag doping method was used to dope electrochemically grown GeS(x) films with controlled doping compared to the conventional process, which can be used in next-generation solid-state memory devices.
