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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires

Bahram Ganjipour1, Jesper Wallentin, Magnus T Borgström

  • 1Division of Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden. bahram.ganjipour@ftf.lth.se

ACS Nano
|March 15, 2012
PubMed

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