A method to improve electrical properties of BiFeO3 thin films

A method is used to improve the electrical properties of BiFeO(3) thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO(3)/Pt/TiO(2)/SiO(2)/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO(3) thin films. BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P(r) ≈ 167.6 μC/cm(2) is also demonstrated for the BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets.