High quality p-type Ag-doped ZnO thin films achieved under elevated growth temperatures

By correlating the effects of substrate temperature, oxygen pressure and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on a sapphire (0001) substrate, p-type conductivity is achieved under various substrate temperatures in the wide range of 250-750 °C. All of the samples were deposited by pulsed-laser deposition under various designed conditions. Hall measurements indicate that the best conductivity is achieved in Ag-ZnO films under a substrate temperature of 500 °C, a partial oxygen pressure of 250-300 mTorr and laser energy between 330 and 345 mJ. The hole-carrier concentration is 2.29 × 10(18) cm(-3), the resistivity is 0.9 Ω cm and the mobility is 3.03 cm(2) V(-1) s(-1). Transmission-electron microscopy (TEM) studies on the p-type films reveal similar microstructural properties to one another, but different properties to that of the n-type films deposited at the same temperatures with different deposition parameters.