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Related Experiment Video

Updated: May 24, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

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Published on: October 13, 2017

InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 µm.

Yuqing Jiao1, Bauke W Tilma, Junji Kotani

  • 1COBRA Research Institute, Eindhoven University of Technology, Eindhoven 5600 MB, the Netherlands. y.jiao@tue.nl

Optics Express
|March 16, 2012
PubMed
Summary

This study presents novel waveguide photodetectors using InAs/InP quantum dots (QD), suitable for swept-source optical coherent tomography (SS-OCT). The devices demonstrate excellent performance around 1.7 μm, validated by rate equation and equivalent circuit models.

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Area of Science:

  • Optoelectronics
  • Semiconductor Devices
  • Quantum Dot Technology

Background:

  • Waveguide photodetectors are crucial for optical sensing and communication.
  • Quantum dot (QD) materials offer unique optoelectronic properties.
  • Integration of active and passive photonic components is a key technological goal.

Purpose of the Study:

  • To present the first study of waveguide photodetectors based on InAs/InP quantum dot (QD) active material.
  • To evaluate the performance of these QD photodetectors for swept-source optical coherent tomography (SS-OCT) applications.
  • To model the device dynamics using a modified rate equation model and analyze electrical bandwidth limitations.

Main Methods:

  • Fabrication of waveguide photodetectors using semiconductor optical amplifier (SOA) layer stacks.
  • Characterization of dark current, responsivity, spectral response, and bandwidth.
  • Application of a modified rate equation model for QD-SOAs to understand device dynamics.
  • Utilizing an equivalent circuit model to determine device capacitances and bandwidth limitations.

Main Results:

  • The fabricated InAs/InP QD waveguide photodetectors meet the requirements for SS-OCT around 1.7 μm.
  • The modified rate equation model accurately matched experimental measurements between 1.6 and 1.8 μm by fitting carrier escape rates.
  • Equivalent circuit modeling identified capacitances as the dominant factor limiting electrical bandwidth.

Conclusions:

  • InAs/InP QD waveguide photodetectors are a promising technology for SS-OCT.
  • The developed models provide valuable insights into QD photodetector dynamics and performance.
  • These detectors are compatible with active-passive integration, enabling advanced photonic circuits.