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Updated: May 24, 2026

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7−δ/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 (STO) Single-crystal Substrates
Published on: April 12, 2019
The magnetotransport properties of the intermetallic compound GdCu6
M K Chattopadhyay1, Parul Arora, S B Roy
1Magnetic & Superconducting Materials Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India. maulindu@rrcat.gov.in
Abstract:
We have studied the temperature and magnetic field dependence of the electrical resistivity of GdCu(6) and have co-related the results with the temperature dependence of heat capacity and magnetization. The magnetoresistance of GdCu(6) is found to be positive both in the paramagnetic and antiferromagnetic regimes. Within the antiferromagnetic regime, the magnetoresistance is very high and increases to still higher values both with increasing field and decreasing temperature. In the paramagnetic regime the magnetoresistance continues to exhibit a finite positive value up to temperatures much higher than that corresponding to the antiferromagnetic to paramagnetic phase transition. We have shown through quantitative analysis that both the temperature dependences of resistivity and heat capacity indicate the presence of spin fluctuations within the paramagnetic regime of GdCu(6). The field dependence of electrical resistivity indicates that the positive magnetoresistance in the paramagnetic phase is not related to the orbital motion of the conduction electrons in a magnetic field (the Kohler rule). In contrast, our analysis indicates that these spin fluctuations are responsible for the positive magnetoresistance observed within this paramagnetic regime. The nature of the field dependence of electrical resistivity is found to be qualitatively similar both in the antiferromagnetic and paramagnetic regimes, which probably indicates that spin fluctuations in the paramagnetic regime are of the antiferromagnetic type.
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