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Silicon photodiodes with high photoconductive gain at room temperature
1SiOnyx Inc., 100 Cummings Center, Suite 243F, Beverly, MA 01915, USA. xli@sionyx.com
Optics Express
|March 16, 2012
Abstract:
Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.
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