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Updated: May 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Enhanced carrier transport along edges of graphene devices
Jungseok Chae1, Suyong Jung, Sungjong Woo
1Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
Abstract:
The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.
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