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Updated: May 23, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Controlling bulk conductivity in topological insulators: key role of anti-site defects
D O Scanlon1, P D C King, R P Singh
1University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, London, UK. d.scanlon@ucl.ac.uk
Abstract:
Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
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