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Constructing anisotropic single-Dirac-cones in Bi(1-x)Sb(x) thin films
Shuang Tang1, Mildred S Dresselhaus
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. tangs@mit.edu
Nano Letters
|March 22, 2012
Summary
Researchers can engineer unique electronic properties in bismuth antimony (Bi(1-x)Sb(x)) thin films by controlling their band structure. A new model predicts anisotropic single-Dirac-cones for tailored applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Electronic band structures of Bismuth Antimony (Bi(1-x)Sb(x)) thin films are tunable.
- Properties depend on temperature, pressure, stoichiometry, thickness, and growth orientation.
Purpose of the Study:
- To demonstrate the construction of anisotropic single-Dirac-cones in Bi(1-x)Sb(x) thin films.
- To enable tailored electronic properties for specific applications or research.
Main Methods:
- Development of an iterative two-dimensional, two-band model.
- Calculation of consistent inverse-effective-mass-tensor and band gap.
Main Results:
- The model successfully predicts anisotropic single-Dirac-cone structures.
- Demonstrated tunability of electronic band structures in Bi(1-x)Sb(x) thin films.
Conclusions:
- Anisotropic single-Dirac-cones can be precisely engineered in Bi(1-x)Sb(x) thin films.
- The developed model is applicable to general 2D systems with nonparabolic dispersion relations.
