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Updated: May 23, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide
Changhua Jin1, Junghyun Lee, Eunkyo Lee
1National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, Gyeonggi-Do 440-746, Korea.
Abstract:
Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.
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