Related Experiment Video
Updated: May 23, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Ultrastrong coupling regime and plasmon polaritons in parabolic semiconductor quantum wells
Markus Geiser1, Fabrizio Castellano, Giacomo Scalari
1Institute for Quantum Electronics, ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland. mgeiser@ethz.ch
Abstract:
Ultrastrong coupling is studied in a modulation-doped parabolic potential well coupled to an inductance-capacitance resonant circuit. In this system, in accordance to Kohn's theorem, strong reduction of the energy level separation caused by the electron-electron interaction compensates the depolarization shift. As a result, a very large ratio of 27% of the Rabi frequency to the center resonance frequency as well as a polariton gap of width 2π × 670 GHz are observed, suggesting parabolic quantum wells as the system of choice in order to explore the ultrastrong coupling regime.
Related Concept Videos
¹H NMR: Long-Range Coupling
In alkenes, spin information is communicated via σ–π overlap, as seen in allylic (four-bond) and homoallylic (five-bond) couplings. These coupling interactions are stronger when the σ bond is parallel to the alkene π orbitals.
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

