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Updated: May 23, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Chemical engineering of molecular qubits
C J Wedge1, G A Timco, E T Spielberg
1Centre for Advanced Electron Spin Resonance, Clarendon Laboratory, Department of Physics, University of Oxford, OX1 3PU, United Kingdom.
Abstract:
We show that the electron spin phase memory time, the most important property of a molecular nanomagnet from the perspective of quantum information processing, can be improved dramatically by chemically engineering the molecular structure to optimize the environment of the spin. We vary systematically each structural component of the class of antiferromagnetic Cr(7)Ni rings to identify the sources of decoherence. The optimal structure exhibits a phase memory time exceeding 15 micros.
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