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Deformation and scattering in graphene over substrate steps.

T Low¹, V Perebeinos, J Tersoff

¹IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.

Physical Review Letters

|April 3, 2012

Summary

Substrate steps significantly impact graphene's electrical resistance. Calculations show doping changes near steps, not just deformation, explain experimental resistance measurements in epitaxial graphene on silicon carbide.

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Area of Science:

Materials Science
Condensed Matter Physics
Surface Science

Background:

Electrical properties of graphene are highly sensitive to the underlying substrate.
Epitaxial graphene on silicon carbide (SiC) exhibits resistance attributed to substrate step edges.

Purpose of the Study:

To calculate graphene deformation at substrate steps.
To determine the contribution of deformation and doping to electrical resistance.

Main Methods:

Elastic deformation calculations for graphene on SiC steps.
Modeling of substrate-induced doping effects at step edges.

Main Results:

Elastic deformation of graphene at steps contributes minimally to resistance.
Reduced substrate doping on the lower side of steps significantly increases resistance.
Calculated resistance values align with experimental measurements.

Conclusions:

Substrate-induced doping variations, not elastic deformation, are the primary cause of resistance at graphene-SiC steps.
Understanding these effects is crucial for controlling graphene's electrical properties.