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Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in

Jongho Lee1, Jian Wu, Jae Ha Ryu

  • 1Department of Mechatronics, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-712, Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|April 3, 2012
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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...