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Updated: May 23, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Real time observation and kinetic modeling of the cellular uptake and removal of silicon quantum dots
Seiichi Ohta1, Susumu Inasawa, Yukio Yamaguchi
1Department of Chemical System Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. s-ohta@chemsys.t.u-tokyo.ac.jp
Abstract:
The time courses of uptake and removal of silicon quantum dots (Si-QDs) by human umbilical endothelial cells (HUVECs) were observed via confocal laser scanning microscope. Si-QDs were internalized via endocytosis and transported to late endosomes/lysosomes. The number of internalized Si-QDs increased with time and gradually reached a plateau value. When Si-QD-internalized HUVECs were subsequently washed and exposed to fresh culture medium, HUVECs removed internalized Si-QDs via exocytosis. The number of internalized Si-QDs decreased with time and gradually reached a plateau value. Not all internalized Si-QDs were removed from the cell interior but large numbers of internalized Si-QDs remained accumulated inside cells. A kinetic model based on the mass balance of Si-QDs and receptors in a cell was proposed to describe the cellular uptake and removal of Si-QDs. Model calculation fitted well with experimental results. Using this model, the dissociation constant between receptors and Si-QDs in the endosome, K(d,in), was found to be a determinant factor for Si-QD accumulation in cells after the removal process.

