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Updated: May 23, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Graphene/metal contacts: bistable states and novel memory devices
Xiaomu Wang1, Weiguang Xie, Jun Du
1Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
Abstract:
Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between "ohmic" and "space-charge region limited" states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.
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