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Sub-20 nm laser ablation for lithographic dry development.

D G de Oteyza¹, P N Perera, M Schmidt

¹Molecular Foundry, 1 Cyclotron Road, MS 2206R67, CA 94720, USA.

|April 14, 2012

Summary

A novel dry development process using laser ablation achieves sub-20 nm features with high aspect ratios in nanolithography. This method overcomes pattern collapse challenges seen in traditional wet development, enabling advanced miniaturization.

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Area of Science:

Nanolithography
Materials Science
Laser Technology

Background:

Traditional wet development in nanolithography faces challenges with pattern collapse for small or high aspect ratio features.
Miniaturization efforts are hindered by the limitations of conventional development techniques.

Purpose of the Study:

To introduce a new dry process combining high-resolution resist exposure and selective laser ablation.
To achieve high resolution and high aspect ratios unattainable with conventional development.

Main Methods:

Utilized a low-power 532 nm laser for selective dry development of a methyl acetoxy calix(6)arene resist.
Employed laser ablation at 1-2 seconds per pixel (600 nm spot diameter) to create features.
Demonstrated a dual approach combining electron beam exposure with non-ablative laser exposure for negative-tone development.

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Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

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Main Results:

Successfully revealed sub-20 nm half-pitch features in a ~100 nm film with high aspect ratios.
Achieved aspect ratios superior to those possible with conventional wet development.
Showcased reduced electron beam exposure doses for negative-tone development using the combined laser method.

Conclusions:

The novel dry development process effectively overcomes pattern collapse issues in nanolithography.
This technique enables the fabrication of high-resolution, high-aspect-ratio features crucial for miniaturization.
The combined electron beam and laser exposure offers a more efficient route for negative-tone development.