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Visible-NIR photodetectors based on CdTe nanoribbons
Xing Xie1, So-Ying Kwok, Zhenzhen Lu
1Centre Of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, PR China.
Nanoscale
|April 14, 2012
Summary
First-time synthesis of zinc blende CdTe nanoribbons (NRs) reveals p-type conductivity. These CdTe NRs exhibit excellent photoresponses for visible-near-infrared light, demonstrating high stability and reliability for photodetector applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Zinc blende CdTe nanostructures are promising for optoelectronic devices.
- Understanding their electronic and photoconductive properties is crucial for device optimization.
Purpose of the Study:
- To synthesize zinc blende CdTe nanoribbons (NRs) for the first time.
- To systematically investigate the electronic, transport, and photoconductive properties of these CdTe NRs.
- To explore their potential for visible-near-infrared (NIR) photodetector applications.
Main Methods:
- Two-step synthesis process for CdTe NRs.
- Characterization of electronic and transport properties.
- Photoconductivity measurements under visible-NIR irradiation.
Main Results:
- Successful synthesis of zinc blende CdTe NRs.
- Demonstrated p-type conductivity in CdTe NRs.
- Significant photoresponses to visible-NIR light (400-800 nm) with high responsivity and gain.
- Analysis of factors influencing photoresponse (surface states, channel length, light intensity, bias voltage).
Conclusions:
- CdTe NRs exhibit excellent optoelectronic properties for photodetector applications.
- Single CdTe NR-based photodetectors demonstrate high stability and reliability.
- The study provides insights into optimizing CdTe NR photodetector performance.
