[Photoemission characteristic of transmission-mode extended blue GaAs photocathodes]

Based on the theoretical models of computing the photocathode optical performance, quantum yield and integral sensitivity, the photoemission characteristics of the domestic and ITT's transmission-mode extended blue GaAs photocathodes, namely the cathode optical properties and performance parameters, were respectively investigated. The compared results show that the integral sensitivity of the domestic transmission-mode extended blue photocathode has achieved 2,100 microA x lm(-1), still falling behind the ITT's integral sensitivity of 2,750 μA x m(-1). The reasons for the difference in quantum yield curves are that, on one hand, the thickness of GaAlAs window-layer and the Al mole fraction play a critical role in the short-wavelength response, especially in the extended blue region. On the other hand, the cathode performance parameters such as electron diffusion length and back interface recombination velocity work on the long-wavelength and short-wavelength response. All these factors are subject to the backwardness of basic industrial manufacturing level.