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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Dependences of photoluminescence from P-implanted epitaxial Ge

L Ding1, Andy Eu-Jin Lim, Jason Tsung-Yang Liow

  • 1Institute of Microelectronics, A STAR (Agency for Science, technology and Research), 11 Science Park Road, Science Park II, 117685 Singapore. dingl@ime.a-satr.edu.sg

Optics Express
|April 20, 2012
PubMed

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