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Published on: January 7, 2019
Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide
Shigeaki Sekiguchi1, Teruo Kurahashi, Lei Zhu
1Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–0197, Japan. s.sekiguchi@jp.fujitsu.com
We developed a novel silicon-based optical switch using a silicon-germanium/silicon heterostructure. This device achieves low switching power and fast response times, showing promise for compact, efficient photonic devices.
Area of Science:
- Photonics and optoelectronics
- Semiconductor device physics
Background:
- Optical switches are crucial components in modern communication networks.
- Existing silicon-based optical switches often face limitations in terms of power consumption and device size.
- Carrier-plasma-induced phase shifting offers a potential mechanism for low-power optical modulation.
Purpose of the Study:
- To propose and demonstrate a novel silicon-based optical switch utilizing a silicon-germanium (SiGe) / silicon (Si) heterostructure.
- To investigate the performance of a carrier-plasma-induced phase shifter in a Mach-Zehnder optical switch configuration.
- To evaluate the switching power and switching time of the fabricated device.
Main Methods:
- Fabrication of a Mach-Zehnder optical switch incorporating a SiGe/Si heterostructure waveguide core.
- Utilizing the carrier-plasma effect in the SiGe waveguide for phase shifting.
- Characterization of the optical switch's switching power and switching time under different driving conditions.
Main Results:
- The fabricated optical switch demonstrated a low switching power of 1.53 mW.
- A compact phase shifter length of 250 μm was achieved.
- Switching times of less than 4.6 ns (square waveform) and 1 ns (pre-emphasis) were recorded.
Conclusions:
- The proposed SiGe/Si waveguide structure effectively confines carriers, enabling efficient phase shifting.
- The developed optical switch exhibits excellent performance metrics, including low power consumption and high speed.
- This SiGe/Si heterostructure technology is highly promising for the development of next-generation compact and low-power active photonic devices.
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