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High-speed photodiodes for InP-based photonic integrated circuits.

E Rouvalis1, M Chtioui, M Tran

  • 1Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK. e.rouvalis@ee.ucl.ac.uk

Optics Express
|April 20, 2012
PubMed
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We achieved monolithic integration of high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) with Multimode Interference (MMI) couplers. This enables advanced millimeter-wave photomixing sources with exceptional performance.

Area of Science:

  • Photonics and Optoelectronics
  • Integrated Photonics
  • High-Frequency Electronics

Background:

  • Millimeter-wave (mmWave) sources are crucial for advanced communication and sensing.
  • Existing photomixing sources face limitations in bandwidth, output power, and integration.

Purpose of the Study:

  • To demonstrate the monolithic integration of high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) with Multimode Interference (MMI) couplers.
  • To develop a versatile platform for active-passive monolithic integration for mmWave photomixing.

Main Methods:

  • Evanescently coupled UTC-PDs with bandwidths exceeding 100 GHz were integrated with MMI couplers.
  • The platform supports butt-joint monolithic integration with Multiple Quantum Well (MQW) devices.

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Last Updated: May 23, 2026

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Published on: April 1, 2020

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09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Main Results:

  • Fabricated devices achieved a 3-dB bandwidth of up to 110 GHz.
  • Output power exceeded 0 dBm (1 mW) at 120 GHz.
  • A flat frequency response was observed across the microwave F-band (90-140 GHz).

Conclusions:

  • Monolithic integration of UTC-PDs and MMI couplers is feasible.
  • This platform is suitable for high-performance, narrow linewidth mmWave photomixing sources.
  • The demonstrated devices show significant potential for future wireless communication systems.