Related Experiment Video
Updated: May 23, 2026
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
High-speed photodiodes for InP-based photonic integrated circuits
E Rouvalis1, M Chtioui, M Tran
1Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK. e.rouvalis@ee.ucl.ac.uk
Abstract:
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
