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Related Concept Videos

Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle01:19

Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle

Inductively coupled plasma (ICP) is the most widely used plasma source in atomic emission spectroscopy (AES), also known as Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). The ICP source, or torch, consists of three concentric quartz tubes with argon gas flowing through them. A spark from a Tesla coil initiates the ionization of argon, generating a high-temperature plasma.
The ions and electrons produced interact with the fluctuating magnetic field created by a water-cooled...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Si-compatible cleaning process for graphene using low-density inductively coupled plasma.

Yeong-Dae Lim1, Dae-Yeong Lee, Tian-Zi Shen

  • 1SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea.

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|April 21, 2012
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Summary

A new inductively coupled plasma (ICP) cleaning method effectively removes resist residues from few-layer graphene (FLG) without causing defects. This low-temperature technique restores FLG

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Area of Science:

  • Materials Science
  • Surface Science
  • Plasma Physics

Background:

  • Conventional capacitively coupled plasma (CCP) treatments introduce defects into few-layer graphene (FLG).
  • Resist residue removal is crucial for graphene's electronic applications.
  • Existing cleaning methods like thermal annealing or wet-chemical treatments have drawbacks.

Purpose of the Study:

  • To develop a novel, low-damage cleaning technique for few-layer graphene (FLG).
  • To assess the effectiveness of inductively coupled plasma (ICP) with extremely low plasma density for FLG cleaning.
  • To evaluate the impact of the ICP cleaning on FLG's structural integrity and electronic properties.

Main Methods:

  • Utilized inductively coupled plasma (ICP) with an extremely low plasma density (3.5 × 10^8 cm⁻³).
  • Employed Argon (Ar) plasma for cleaning few-layer graphene (FLG) samples.
  • Performed cleaning at room temperature (300 K) for 3 minutes.

Main Results:

  • Successfully removed polymer resist residues from FLG.
  • Preserved the carbon sp²-bonding and planar symmetry of FLG.
  • Restored carrier mobility and charge neutrality point to pristine, defect-free levels.

Conclusions:

  • Inductively coupled plasma (ICP) with extremely low plasma density offers a superior cleaning method for few-layer graphene (FLG).
  • This technique is a viable, low-temperature alternative to conventional methods for Si-compatible electronic devices.
  • The process is high-throughput, large-area compatible, and preserves FLG quality.