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Updated: May 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Yeong-Dae Lim1, Dae-Yeong Lee, Tian-Zi Shen
1SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene Center, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea.
A new inductively coupled plasma (ICP) cleaning method effectively removes resist residues from few-layer graphene (FLG) without causing defects. This low-temperature technique restores FLG
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