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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Spin–Spin Coupling Constant: Overview01:08

Spin–Spin Coupling Constant: Overview

In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

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Related Experiment Video

Updated: May 23, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Silicon spintronics.

Ron Jansen1

  • 1National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan. ron.jansen@aist.go.jp

Nature Materials
|April 24, 2012
PubMed
Summary

Silicon spintronics integrates semiconductor and magnetic materials for energy-efficient computing by encoding data in electron spin. Advances in silicon suggest its potential to revolutionize information technology.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Global research focuses on merging semiconductors and magnetic materials for advanced information technology.
  • Electron spin-based electronics (spintronics) offer a path to revolutionary energy efficiency.
  • Integrating spintronics into silicon is crucial for widespread adoption and technological transformation.

Purpose of the Study:

  • To review key developments and achievements in silicon spintronics.
  • To describe the fundamental building blocks of silicon spintronics.
  • To discuss challenges and future prospects of this emerging field.

Main Methods:

  • Review of recent scientific literature and experimental findings.
  • Analysis of advancements in spin polarization creation and control in silicon.

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Related Experiment Videos

Last Updated: May 23, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

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  • Identification of key components and challenges in silicon spintronics.

    • Main Results:

    • Significant progress has been made in creating and controlling spin polarization in silicon.
    • The foundational elements for silicon spintronics are being established.
    • Unexpected and puzzling results highlight areas for further investigation.

    Conclusions:

    • Silicon spintronics shows strong potential to meet expectations for next-generation information technology.
    • Further research is needed to address open issues and overcome challenges.
    • The field is poised for continued surprises and advancements as it matures.