All solution processable organic photovoltaic cells using DMDCNQI as an organic N-type buffer layer

Organic photovoltaic cells consisting of ITO/PEDOT-PSS/P3HT:PCBM/TiO(x)/DMDCNQI/Al have been fabricated by using dip-coated DMDCNQI layer as a cathode buffer material. We have investigated the physical effects of charge transfer complex and wettability of DMDCNQI between TiO(x)/P3HT:PCBM layer and Al cathode electrode on the performance of organic photovoltaic cell. The photovoltaic cell fabricated with a dip-coated DMDCNQI layer exhibited almost similar performance compared to the device using conventional evaporated DMDCNQI layer. Especially, the power conversion efficiency of the prepared organic photovoltaic cell using TiO(x)/DMDCNQI layer was improved to 3.1%, which is mainly due to the decrease in the low contact resistance of organic-metal interface.