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Updated: May 22, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating
Luca Pellegrino1, Nicola Manca, Teruo Kanki
1CNR-SPIN, Corso Perrone 24, Genova, 16152, Italy. luca.pellegrino@spin.cnr.it
Abstract:
Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.
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