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Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.

Daiki Tanaka1, Yuya Shoji, Masashi Kuwahara

  • 1Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama-shi, Kanagawa-ken 223-8522, Japan. d_tanaka@tsud.elec.keio.ac.jp

Optics Express
|April 27, 2012
PubMed
Summary

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We developed a compact 1 µm optical gate switch using a phase-change material. This laser-activated device demonstrates reliable switching for optical communication applications.

Area of Science:

  • Photonics and optical engineering
  • Materials science

Background:

  • Optical switches are crucial components in modern communication networks.
  • Developing compact and efficient optical switching devices remains a key research area.

Purpose of the Study:

  • To demonstrate a novel multi-mode interference-based optical gate switch.
  • To utilize a phase-change material, Germanium-Antimony-Tellurium (Ge2Sb2Te5), for optical switching applications.

Main Methods:

  • Fabrication of a micro-scale optical gate switch with a 1 µm diameter using Ge2Sb2Te5 thin film.
  • Demonstration of switching operation via laser pulse irradiation.
  • Characterization of operating wavelength range, extinction ratio, and switching speed.

Main Results:

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  • Achieved a wide operating wavelength range of 100 nm around 1575 nm.
  • Demonstrated an average extinction ratio of 12.6 dB.
  • Confirmed repetitive switching over 2,000 cycles with rise and fall times of 130 ns and 400 ns, respectively.
  • Observed self-holding characteristics.

Conclusions:

  • The Ge2Sb2Te5-based optical gate switch shows promise for high-performance optical communication systems.
  • The device's compact size, wide operating range, and fast switching speeds are significant advantages.