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Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single
Jia-Mian Hu1, Zheng Li, Long-Qing Chen
1State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Abstract:
A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.
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