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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics
Ruomeng Yu1, Lin Dong, Caofeng Pan
1School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
Advanced Materials (Deerfield Beach, Fla.)
|May 1, 2012
Abstract:
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
