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Updated: May 22, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Solution-based synthesis of crystalline silicon from liquid silane through laser and chemical annealing
Ganjigunte R S Iyer1, Erik K Hobbie, Srinivasan Guruvenket
1Department of Physics and Department of Coatings and Polymeric Materials, North Dakota State University, Fargo, North Dakota 58102, USA.
Abstract:
We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si(6)H(12)). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient postprocessing to produce crystalline silicon thin films.

