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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Thermal and Photochemical Electrocyclic Reactions: Overview01:26

Thermal and Photochemical Electrocyclic Reactions: Overview

Electrocyclic reactions are reversible reactions. They involve an intramolecular cyclization or ring-opening of a conjugated polyene. Shown below are two examples of electrocyclic reactions. In the first reaction, the formation of the cyclic product is favored. In contrast, in the second reaction, ring-opening is favored due to the high ring strain associated with cyclobutene formation.
Photoreceptors and Visual Pathways01:22

Photoreceptors and Visual Pathways

At the molecular level, visual signals trigger transformations in photopigment molecules, resulting in changes in the photoreceptor cell's membrane potential. The photon's energy level is denoted by its wavelength, with each specific wavelength of visible light associated with a distinct color. The spectral range of visible light, classified as electromagnetic radiation, spans from 380 to 720 nm. Electromagnetic radiation wavelengths exceeding 720 nm fall under the infrared category, whereas...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: May 22, 2026

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

Graded recombination layers for multijunction photovoltaics.

Ghada I Koleilat1, Xihua Wang, Edward H Sargent

  • 1Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.

Nano Letters
|May 5, 2012
PubMed
Summary

Researchers designed efficient graded recombination layers (GRLs) for multijunction solar cells. These layers minimize voltage loss and optical absorption, improving photovoltaic device performance by optimizing interlayer work functions and doping.

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Related Experiment Videos

Last Updated: May 22, 2026

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
11:30

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

Published on: March 6, 2017

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Renewable Energy

Background:

  • Multijunction devices utilize stacked semiconductor junctions with tailored bandgaps for enhanced spectral utilization.
  • Efficient recombination layers are crucial in series-connected, current-matched multijunction solar cells for minimizing voltage loss.
  • Previous work demonstrated tandem solar cells using n-type oxides for recombination layers, achieving low resistive loss.

Purpose of the Study:

  • To establish generalized design conditions for efficient graded recombination layer (GRL) solar devices.
  • To determine the optimal number of interlayers and their work function/doping requirements for large work function differences.
  • To minimize interlayer doping to reduce optical absorption losses within the GRL.

Main Methods:

  • Theoretical analysis to derive generalized conditions for GRL design.
  • Calculation of interlayer requirements (work function and doping) to bridge significant work function differences (up to 1.6 eV).
  • Experimental demonstration of novel GRL designs.

Main Results:

  • Identified specific requirements for interlayers, including work function and doping levels, to bridge a 1.6 eV work function difference.
  • Developed strategies to minimize interlayer doping, thereby reducing free carrier optical absorption in the GRL.
  • Experimentally validated a series of new GRL designs, showcasing the advantages of graded work functions and dopings.

Conclusions:

  • Efficient GRLs can be designed by carefully controlling the work function and doping of constituent interlayers.
  • Minimizing doping in GRLs is key to reducing optical losses and enhancing overall device efficiency.
  • The presented design principles enable the creation of advanced multijunction solar cells with improved performance.