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Related Experiment Video

Updated: May 22, 2026

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

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Published on: March 19, 2016

Laterally coupled silicon-germanium modulator for passive waveguide systems.

Peng Huei Lim¹, Jingnan Cai, Yasuhiko Ishikawa

¹DSO National Laboratories, Singapore 118230, Singapore.

|May 5, 2012

Summary

We developed a novel silicon-germanium ring modulator to overcome C-band absorption losses. This design integrates seamlessly with passive waveguides, minimizing transition losses for efficient optical modulation.

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Photonics and Optoelectronics
Materials Science
Semiconductor Devices

Background:

Silicon-germanium (SiGe) alloys are crucial for optoelectronic devices but suffer from indirect absorption in the C-band.
Existing SiGe modulator designs often require complex integration and are limited by optical losses.
Loss-sensitive interferometry is a key area for improving modulator performance.

Purpose of the Study:

To model a laterally coupled Franz-Keldysh add-drop ring modulator using silicon-germanium.
To overcome the challenge of C-band indirect absorption in silicon-germanium.
To enable integration with passive waveguide networks and minimize transition losses.

Main Methods:

Modeling of a laterally coupled ring modulator.
Utilizing germanium-rich compositions for high absorption.
Designing for integration with passive waveguide networks.

Main Results:

The proposed modulator overcomes C-band indirect absorption limitations.
The device is compatible with passive waveguide networks where carrier plasma modulation is ineffective.
Eliminates the need for complex butt-coupling between passive and active waveguides.

Conclusions:

The modeled silicon-germanium ring modulator offers a pathway to efficient optical modulation.
The design minimizes transition losses by keeping the optical mode guided within the transport waveguide.
This advancement facilitates integration with existing complementary metal-oxide semiconductor (CMOS) technologies.