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Published on: June 13, 2010
Lock-in detection for pulsed electrically detected magnetic resonance
Felix Hoehne1, Lukas Dreher, Jan Behrends
1Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany. hoehne@wsi.tum.de
Pulsed electrically detected magnetic resonance (pEDMR) uses signal modulation and lock-in detection to significantly reduce noise and eliminate background signals. This technique enhances spin-echo measurements in phosphorus-doped silicon.
Area of Science:
- Solid-state physics
- Quantum information science
- Magnetic resonance spectroscopy
Background:
- Pulsed electrically detected magnetic resonance (pEDMR) is a sensitive technique for probing spin properties in semiconductors.
- Low-frequency noise and microwave-induced non-resonant background can limit the sensitivity and accuracy of pEDMR measurements.
- Efficient spin state readout is crucial for high-fidelity pEDMR experiments.
Purpose of the Study:
- To develop and demonstrate a novel method for improving signal-to-noise ratio in pEDMR.
- To reduce low-frequency noise and eliminate microwave-induced background in pEDMR experiments.
- To enhance the sensitivity of spin-echo measurements in phosphorus-doped silicon.
Main Methods:
- Implementation of a signal modulation technique by cycling the phase of the projection pulse in pEDMR.
- Utilizing a lock-in detection scheme synchronized with the signal modulation.
- Experimental validation using spin-echo measurements in phosphorus-doped silicon.
Main Results:
- Achieved a reduction in the low-frequency noise level by one order of magnitude.
- Successfully eliminated the microwave-induced non-resonant background signal.
- Demonstrated significant enhancement in signal quality for spin-echo measurements.
Conclusions:
- Signal modulation combined with lock-in detection is an effective strategy for improving pEDMR sensitivity.
- This method provides a robust way to overcome common noise sources in pEDMR.
- The technique is particularly beneficial for spin-echo measurements in semiconductor systems like phosphorus-doped silicon.
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