Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Surface circumferential spinal cord recording in freely moving rodents.

Nature communications·2026
Same author

Design principles for π-conjugated hydrogel semiconductors.

Nature materials·2026
Same author

Body surface potential mapping of the cortico-muscular axis using smart textile electrode arrays.

Nature communications·2026
Same author

Roles of astrocytic Connexin 43 gap junctional deficit in alpha-synucleinopathy and inflammation relevant to Parkinson's.

Experimental neurology·2026
Same author

Brain-computer interfaces and neuroprosthetics in the next era of neurosurgery.

British journal of neurosurgery·2026
Same author

ADVANTAGE: Advanced discovery of visceral analgesics by neuroimmune targets and the genetics of extreme human phenotype, a study protocol.

PloS one·2026

Related Experiment Video

Updated: May 22, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Liangfeng Sun1, Joshua J Choi, David Stachnik

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA. ls462@cornell.edu

Nature Nanotechnology
|May 8, 2012
PubMed
Summary

Researchers developed advanced infrared light-emitting diodes using quantum dots. These diodes offer significantly higher performance and tunable wavelengths, paving the way for cost-effective, integrated optoelectronic devices.

More Related Videos

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: May 22, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Infrared light-emitting diodes (LEDs) traditionally rely on expensive epitaxial growth of direct-gap semiconductors, hindering integration.
  • Colloidal semiconductor quantum dots offer a low-cost, solution-processable alternative for LED fabrication and silicon integration.
  • Previous quantum dot LEDs suffered from poor control over exciton dynamics, limiting performance.

Purpose of the Study:

  • To enhance the performance of infrared quantum dot light-emitting diodes (QLEDs).
  • To achieve efficient charge injection and radiative exciton recombination in QLEDs.
  • To enable tunable emission wavelengths for infrared applications.

Main Methods:

  • Fabrication of thin-film QLEDs using lead sulfide (PbS) quantum dots.
  • Tuning inter-dot distances by varying linker molecule lengths (3-8 CH(2) groups).
  • Characterization of electroluminescence, radiance, and external quantum efficiency.

Main Results:

  • Achieved eight-fold higher radiance (6.4 W sr(-1) m(-2)) and two-fold higher external quantum efficiency (2.0%).
  • Optimized inter-dot spacing (1.3 nm range) to balance charge injection and recombination.
  • Demonstrated electroluminescent power comparable to commercial InGaAsP LEDs.
  • Tunable emission wavelengths from 800 to 1,850 nm by varying quantum dot size.

Conclusions:

  • Inter-dot distance is a critical parameter for optimizing QLED performance.
  • Solution-processed PbS QLEDs can achieve high performance, rivaling traditional infrared LEDs.
  • This work enables cost-effective, tunable infrared light sources for diverse applications.