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An electrically pumped germanium laser.

Rodolfo E Camacho-Aguilera1, Yan Cai, Neil Patel

  • 1Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

Optics Express
|May 9, 2012
PubMed
Summary
This summary is machine-generated.

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Researchers demonstrate electrically pumped lasing in Germanium-on-Silicon diodes, achieving 1mW output power at room temperature. This breakthrough utilizes high phosphorous doping for enhanced Germanium gain spectrum.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Germanium-on-Silicon (Ge-on-Si) technology is crucial for integrated photonics.
  • Achieving efficient light emission from silicon-based materials remains a significant challenge.
  • P-n heterojunction diodes are fundamental semiconductor devices.

Purpose of the Study:

  • To demonstrate electrically pumped lasing in Germanium-on-Silicon p-n heterojunction diode structures.
  • To characterize the lasing performance, including output power and gain spectrum.
  • To investigate the effect of high phosphorous doping concentration in Germanium.

Main Methods:

  • Fabrication of Germanium-on-Silicon p-n heterojunction diode structures.
  • Electrical pumping of the diode structures.

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  • Measurement of optical output power and spectrum at room temperature.
  • Achieving high phosphorous doping concentration (> 4x10^19 cm^-3) in Germanium.

    • Main Results:

    • Successful demonstration of electrically pumped lasing from Ge-on-Si p-n heterojunction diodes.
    • Room temperature multimode laser operation achieved with an output power of 1mW.
    • Observation of a broad Germanium gain spectrum spanning nearly 200nm.

    Conclusions:

    • Electrically pumped lasing is feasible in Ge-on-Si p-n heterojunction diodes.
    • High doping concentrations are critical for achieving significant Germanium gain.
    • This work paves the way for on-chip silicon-based laser sources.