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Updated: May 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Temperature and layer number dependence of the G and 2D phonon energy and damping in graphene

A T Apostolov1, I N Apostolova, J M Wesselinowa

  • 1Faculty of Hydrotechnics, Department of Physics, University of Architecture, Civil Engineering and Geodesy, Sofia, Bulgaria.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|May 10, 2012
PubMed

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