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Updated: May 22, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth
M E Ikpi1, P Atkinson, S P Bremner
1Department of Pure and Applied Chemistry, University of Calabar, PMB 1115, Calabar, Nigeria. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK.
Abstract:
The fabrication of a cross-wire p-i-n light emitting diode (LED) by molecular beam epitaxial overgrowth on mesa-patterned GaAs(100) substrates is presented. Micron-wide mesa stripes fabricated by standard photolithography are subsequently narrowed to sub-micron dimensions by GaAs overgrowth due to net migration towards the mesa top. Chains of InAs quantum dots (QDs) can then be grown in a self-aligned manner on top of the narrow GaAs ridge mesa, forming the active region of the QD-chain LED. The kinetics of the overgrowth is discussed and the electroluminescence operation of the LED is presented.
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