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Updated: Apr 30, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Dual conductance, negative differential resistance, and rectifying behavior in a molecular device modulated by side
Haiqing Wan1, Ying Xu, Guanghui Zhou
1Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China.
Abstract:
We investigate the electronic transport properties for a molecular device model constructed by a phenylene ethynylene oligomer molecular with different side groups embedding in a carbon chain between two graphene electrodes. Using the first-principles method, the unusual dual conductance, negative differential resistance (NDR) behavior with large peak to valley ratio, and obvious rectifying performance are numerically observed in such proposed molecular device. The analysis of the molecular projected self-consistent Hamiltonian and the evolution of the frontier molecular orbitals (MOs) as well as transmission coefficients under various external voltage biases gives an inside view of the observed results, which suggests that the dual conductance behavior and rectifying performance are due to the asymmetry distribution of the frontier MOs as well as the corresponding coupling between the molecule and electrodes. But the NDR behavior comes from the conduction orbital being suppressed at certain bias. Interestingly, the conduction properties can be tuned by introducing side groups to the molecule and the rectification as well as the NDR behavior (peak to valley ratio) can be improved by adding different side groups in the device model.
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