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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Shallow versus deep nature of Mg acceptors in nitride semiconductors

John L Lyons1, Anderson Janotti, Chris G Van de Walle

  • 1Materials Department, University of California, Santa Barbara, California 93106-5050, USA.

Physical Review Letters
|May 17, 2012
PubMed

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