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Updated: May 22, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Charge-transfer-induced cesium superlattices on graphene
Can-Li Song1, Bo Sun, Yi-Lin Wang
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
We investigate cesium (Cs) adsorption on graphene formed on a 6H-SiC(0001) substrate by a combined scanning tunneling microscopy and density functional theory study. Individual Cs atoms adsorb preferentially at the rim region of the well-defined 6×6 substrate superstructure and on multilayer graphene. By finely controlling the graphene thickness and Cs coverages (1/3 ML and 1 ML), we here demonstrate two intriguing and well-ordered Cs superlattices on bilayer and multilayer graphene (<6 layers). Statistical analysis of the Cs-Cs interatomic distance reveals a hitherto unobserved Cs-Cs long-range electrostatic potential caused by charge transfer from Cs to graphene, which couples with the inhomogeneous substrate potential to stabilize the observed Cs superlattices. The present study provides a new avenue to fabricate atomic and molecular superlattices for applications in high-density recording and data storage.

