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Updated: May 22, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Site-selective assembly of quantum dots on patterned self-assembled monolayers fabricated by laser direct-writing
Chong Wu1, Yongsheng Wang, Xuemingyue Han
1National Center for Nanoscience and Technology, Graduate School of Chinese Academy of Sciences, 11 Beiyitiao, Zhongguancun, Beijing, People's Republic of China.
Abstract:
A simple and efficient route for quantum dot (QDs) patterning using self-assembled monolayers (SAMs) as templates is described. By means of a laser direct-writing (LDW) technique, SAMs of octadecylphosphonic acid formed by adsorption on native oxide layer of titanium film were patterned through laser-induced ablation of the SAM molecules. This technique allows the creation of chemical-specific patterns accompanied by slight change in the topography. Using atomic force microscopy and friction force microscopy, the dependence of feature size and characteristics on the irradiation dose was demonstrated. Upon immersion of a substrate with patterned SAMs bearing thiol as the terminal group into a dispersion of QDs resulted in the assembly of QDs on the specific thiol-terminated areas. Patterns of QDs with different photoluminescent wavelength were generated. The LDW technique, which is convenient and flexible due to its path-directed and maskless fabrication process, provided a new powerful approach for patterning materials on surfaces for various applications.

