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Updated: May 22, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond
Alastair Stacey1, David A Simpson, Timothy J Karle
1School of Physics, University of Melbourne, Parkville, Melbourne VIC 3010, Australia. alastair.stacey@e6.com
Abstract:
A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.
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