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Convergent Polishing: A Simple, Rapid, Full Aperture Polishing Process of High Quality Optical Flats & Spheres
Published on: December 1, 2014
Macroscopic and microscopic investigation on chemical mechanical polishing of sapphire wafer
Hyunseop Lee1, Hojun Lee, Hobin Jeong
1Graduate School of Mechanical Engineering, Pusan National University, San 30 Changjeon-dong Kumjeong-ku, Busan 609-735, Republic of Korea.
Abstract:
Sapphire (alpha-Al2O3) is an important ceramic material that is widely used in substrate material for electronics. We investigate the chemical reaction layer on a sapphire wafer using X-ray photoelectron microscopy (XPS) and atomic force microscopy (AFM). The frictional characteristics of sapphire chemical mechanical polishing (CMP) was studied using in-situ friction force monitoring system. From XPS analysis and AFM experiment, a chemically-reacted layer was verified on the sapphire surface through a chemical reaction between the sapphire and chemicals in a slurry. During sapphire CMP, the friction force mainly depended on the applied pressure. The material removal efficiency per unit friction energy in sapphire CMP was 6.18 nm/kJ.
