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Updated: May 22, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
High performance flexible organic thin film transistors (OTFTs) with octadecyltrichlorsilane/
Mohammad Arifur Rahman1, Hyunho Kim, Young Kyu Lee
1Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Republic of Korea.
Abstract:
The incorporation of a thin, atomic layer deposited Al2O3 layer in between a spin-coated poly-4-vinyl phenol (PVP) organic layer and octadecyltrichlorsilane (OTS) in the multilayer gate dielectric for pentacene organic thin film transistors on a n(+)-Si substrate reduced the gate leakage current and thereby significantly enhanced the current on/off ratio up to 2.8 x 10(6). Addition of the OTS monolayer on the UV-treated Al2O3 improved the crystallinity of the pentacene layer, where the OTS/UV-treated Al2O3 surfaces increased their contact angles to 100 degrees. X-ray diffraction (XRD) analysis revealed a more intense (001) crystal reflectance of pentacene deposited on OTS/UV-treated Al2O3 surface than that on OTS/Al2O3 surface. Moreover, the improved pentacene layer contributed to the field effect mobility (0.4 cm2/Vs) and subsequently improved the electrical performances of organic thin film transistor (OTFT) devices. This PVP/UV treated Al2O3/OTS multilayer gate dielectric stack was superior to those of the device with the single PVP gate dielectrics due to the improved crystallinity of pentacene.
