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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated
Alicia I Baca1, Joseph J Brown, Kris A Bertness
1Samtec Microelectronics, Colorado Springs, CO 80919, USA.
Nanotechnology
|May 30, 2012
Summary
Titanium dioxide coating and suspended electrodes significantly improve the dielectrophoretic self-assembly of gallium nitride nanowires (GaN NWs). This enhances the yield of individual GaN NWs on microfabricated structures.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Dielectrophoretic self-assembly is a key technique for nanowire integration.
- Gallium nitride nanowires (GaN NWs) are promising for electronic applications.
- Optimizing assembly yield is crucial for device fabrication.
Purpose of the Study:
- To investigate the effects of design and materials on GaN NW dielectrophoretic self-assembly.
- To determine the impact of TiO(2) coating on assembly yield.
- To evaluate the influence of electrode suspension on assembly efficiency.
Main Methods:
- Experimental investigation of dielectrophoretic self-assembly.
- Utilizing atomic layer deposition (ALD) for TiO(2) surface coating.
- Comparing assembly yields with coated and uncoated GaN NWs.
- Testing electrode pairs suspended at different heights.
Main Results:
- TiO(2) coating increased assembly yield by up to 67%.
- Coated GaN NWs achieved 46% assembly success, compared to 28% for uncoated.
- Suspending electrodes 2.75 μm above the substrate improved yield by 15.8%.
Conclusions:
- TiO(2) surface modification and suspended electrode design are effective strategies to enhance GaN NW dielectrophoretic assembly.
- These findings offer a pathway for improved nanowire-based device fabrication.
- Optimized assembly processes are critical for advancing nanotechnology applications.
