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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Particle-assisted Ga(x)In(1-x)P nanowire growth for designed bandgap structures.

D Jacobsson¹, J M Persson, D Kriegner

¹Lund University, Solid State Physics and the Nanometer Structure Consortium, Box 118, SE-22100 Lund, Sweden.

|May 30, 2012

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Vertically straight gallium indium phosphide (GaInP) nanowires were successfully grown with controlled composition. These nanowires exhibit room-temperature photoluminescence across a wide energy range, linked to their bandgap properties.

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Gallium Indium Phosphide (GaInP) nanowires are promising for optoelectronic applications.
Controlling composition in nanowire growth is crucial for tuning material properties.

Purpose of the Study:

To grow non-tapered, vertically straight GaInP nanowires with a tunable composition.
To characterize the material composition and optical properties of the grown nanowires.

Main Methods:

Metal-organic vapor phase epitaxy (MOVPE) in particle-assisted mode.
Controlled precursor flows (trimethylindium, trimethylgallium, hydrogen chloride).
X-ray energy dispersive spectroscopy (XEDS) in transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HRXRD).

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Main Results:

Achieved growth of GaInP nanowires in the compositional range from Ga(0.2)In(0.8)P to GaP.
XEDS confirmed homogeneous radial composition but revealed axial variations within individual nanowires.
HRXRD indicated a material composition variation of approximately 19% across the sample area.
Non-capped nanowires displayed strong room-temperature photoluminescence from 1.43 eV to 2.16 eV.

Conclusions:

Successfully synthesized GaInP nanowires with controlled composition and vertical alignment.
Demonstrated a correlation between material composition and observed photoluminescence energies.
The findings provide insights into compositional control for GaInP nanowire growth and their potential for tunable optoelectronic devices.